Impact of nitrogen (N/sub 14/) implantation into polysilicon gate on high-performance dual-gate CMOS transistors.
Autor: | Bin Yu, Dong-Hyuk Ju, Kepler, N., Chenming Hu |
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Zdroj: | IEEE Electron Device Letters; 1997, Vol. 18 Issue 7, p312-314, 3p |
Databáze: | Complementary Index |
Externí odkaz: |