Impact of nitrogen (N/sub 14/) implantation into polysilicon gate on high-performance dual-gate CMOS transistors.

Autor: Bin Yu, Dong-Hyuk Ju, Kepler, N., Chenming Hu
Zdroj: IEEE Electron Device Letters; 1997, Vol. 18 Issue 7, p312-314, 3p
Databáze: Complementary Index