Transferred substrate Schottky-collector heterojunction bipolar transistors: first results and scaling laws for high f/sub max/.
Autor: | Bhattacharya, U., Mondry, M.J., Hurtz, G., Tan, I.-H., Pullela, R., Reddy, M., Guthrie, J., Rodwell, M.J.W., Bowers, J.E. |
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Zdroj: | IEEE Electron Device Letters; 1995, Vol. 16 Issue 8, p357-359, 3p |
Databáze: | Complementary Index |
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