Transferred substrate Schottky-collector heterojunction bipolar transistors: first results and scaling laws for high f/sub max/.

Autor: Bhattacharya, U., Mondry, M.J., Hurtz, G., Tan, I.-H., Pullela, R., Reddy, M., Guthrie, J., Rodwell, M.J.W., Bowers, J.E.
Zdroj: IEEE Electron Device Letters; 1995, Vol. 16 Issue 8, p357-359, 3p
Databáze: Complementary Index