A double-recessed Al/sub 0.24/GaAs/In/sub 0.16/GaAs pseudomorphic HEMT for Ka- and Q-band power applications.
| Autor: | Huang, J.C., Saledas, P., Wendler, J., Platzker, A., Boulais, W., Shanfield, S., Hoke, W., Lyman, P., Aucoin, L., Miquelarena, A., Bedard, C., Atwood, D. |
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| Zdroj: | IEEE Electron Device Letters; 1993, Vol. 14 Issue 9, p456-458, 3p |
| Databáze: | Complementary Index |
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