Characteristics of MOS capacitors of BF/sub 2/ or B implanted polysilicon gate with and without POCl/sub 3/ co-doped.
| Autor: | Hsieh, J.C., Fang, Y.K., Chen, C.W., Tsai, N.S., Lin, M.-S., Tseng, F.C. |
|---|---|
| Zdroj: | IEEE Electron Device Letters; 1993, Vol. 14 Issue 5, p222-224, 3p |
| Databáze: | Complementary Index |
| Externí odkaz: |
|