Metal migration into polysilicon emitter after very high current stress.
| Autor: | Tang, D.D., Wong, C., McFarland, P.A. |
|---|---|
| Zdroj: | IEEE Electron Device Letters; 1992, Vol. 13 Issue 5, p265-266, 2p |
| Databáze: | Complementary Index |
| Externí odkaz: |
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| Autor: | Tang, D.D., Wong, C., McFarland, P.A. |
|---|---|
| Zdroj: | IEEE Electron Device Letters; 1992, Vol. 13 Issue 5, p265-266, 2p |
| Databáze: | Complementary Index |
| Externí odkaz: |
|