Metal migration into polysilicon emitter after very high current stress.
Autor: | Tang, D.D., Wong, C., McFarland, P.A. |
---|---|
Zdroj: | IEEE Electron Device Letters; 1992, Vol. 13 Issue 5, p265-266, 2p |
Databáze: | Complementary Index |
Externí odkaz: |
Autor: | Tang, D.D., Wong, C., McFarland, P.A. |
---|---|
Zdroj: | IEEE Electron Device Letters; 1992, Vol. 13 Issue 5, p265-266, 2p |
Databáze: | Complementary Index |
Externí odkaz: |