A resistive-gate In/sub 0.53/Ga/sub 0.47/As/InP heterostructure CCD.

Autor: Rossi, D.V., Song, J.-I., Fossum, E.R., Kirchner, P.D., Pettit, G.D., Woodall, J.M.
Zdroj: IEEE Electron Device Letters; 1991, Vol. 12 Issue 12, p688-690, 3p
Databáze: Complementary Index