High-frequency performance of submicrometer channel-length silicon MOSFETs.
Autor: | Raynaud, C., Gautier, J., Guegan, G., Lerme, M., Playez, E., Dambrine, G. |
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Zdroj: | IEEE Electron Device Letters; 1991, Vol. 12 Issue 12, p667-669, 3p |
Databáze: | Complementary Index |
Externí odkaz: |