High-frequency performance of submicrometer channel-length silicon MOSFETs.

Autor: Raynaud, C., Gautier, J., Guegan, G., Lerme, M., Playez, E., Dambrine, G.
Zdroj: IEEE Electron Device Letters; 1991, Vol. 12 Issue 12, p667-669, 3p
Databáze: Complementary Index