High-mobility modulation-doped SiGe-channel p-MOSFETs.
| Autor: | Verdonckt-Vandebroek, S., Crabbe, E.F., Meyerson, B.S., Harame, D.L., Restle, P.J., Stork, J.M.C., Megdanis, A.C., Stanis, C.L., Bright, A.A., Kroesen, G.M.W., Warren, A.C. |
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| Zdroj: | IEEE Electron Device Letters; 1991, Vol. 12 Issue 8, p447-449, 3p |
| Databáze: | Complementary Index |
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