A gate-quality dielectric system for SiGe metal-oxide-semiconductor devices.

Autor: Iyer, S.S., Solomon, P.M., Kesan, V.P., Bright, A.A., Freeouf, J.L., Nguyen, T.N., Warren, A.C.
Zdroj: IEEE Electron Device Letters; 1991, Vol. 12 Issue 5, p246-248, 3p
Databáze: Complementary Index
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