A selectively deposited poly-gate ITLDD process with self-aligned LDD/channel implantation.
| Autor: | Pfiester, J.R., Baker, F.K., Sivan, R.D., Crain, N., Lin, J.-H., Liaw, M., Seelbach, C., Gunderson, C., Denning, D. |
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| Zdroj: | IEEE Electron Device Letters; 1990, Vol. 11 Issue 6, p253-255, 3p |
| Databáze: | Complementary Index |
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