Comments, with reply, on 'Modeling of the 1/f noise overshoot in short-channel MOSFETs locally degraded by hot-carrier injection' by B. Boukriss et al.
Autor: | Comeau, A. |
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Zdroj: | IEEE Electron Device Letters; 1990, Vol. 11 Issue 3, p129-130, 2p |
Databáze: | Complementary Index |
Externí odkaz: |