Comments, with reply, on 'Modeling of the 1/f noise overshoot in short-channel MOSFETs locally degraded by hot-carrier injection' by B. Boukriss et al.

Autor: Comeau, A.
Zdroj: IEEE Electron Device Letters; 1990, Vol. 11 Issue 3, p129-130, 2p
Databáze: Complementary Index