Fully isolated lateral bipolar—MOS transistors fabricated in zone-melting-recrystallized Si films on SiO2.
| Autor: | Tsaur, B.-Y., Silversmith, D.J., Fan, J.C.C., Mountain, R.W. |
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| Zdroj: | IEEE Electron Device Letters; 1983, Vol. 4 Issue 8, p269-271, 3p |
| Databáze: | Complementary Index |
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