| Autor: |
Lao, J. Y., Wen, J. G., Wang, D. Z., Ren, Z. F. |
| Předmět: |
|
| Zdroj: |
International Journal of Nanoscience; Apr2002, Vol. 1 Issue 2, p149, 9p |
| Abstrakt: |
Various amorphous SiO[sub x] nanotube structures nucleated by GeO[sub x] nanoparticles were synthesized by thermal evaporation method. The presence of Ge does not only nucleate the growth of the SiO[sub x] nanomaterials, but also dopes them. The nanostructure morphology is affected by the substrate temperature, source temperature and GeO[sub x] vapor density through their effect on the size and lifetime of the nucleation center. In general, low substrate temperature promotes the formation of the nanotube bundle structure with 2-3% atomic ratio of Ge doping, and high temperature produces Ge-free much less bundled nanotubes. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
