| Autor: |
Raeisi Fard, Hafez, Becker, Nicholas, Hess, Andrew, Pashayi, Kamyar, Proslier, Thomas, Pellin, Michael, Borca-Tasciuc, Theodorian |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 11/4/2013, Vol. 103 Issue 19, p193109, 5p, 1 Diagram, 3 Graphs |
| Abstrakt: |
Cross-plane thermal conductivity of 800, 458, and 110 nm erbium-doped crystalline yttria (Er+3:Y2O3) films deposited via atomic layer deposition was measured using the 3ω method at room temperature. Thermal conductivity results show 16-fold increase in thermal conductivity from 0.49 W m-1K-1 to 8 W m-1K-1 upon post deposition annealing, partially due to the suppression of the number of the -OH/H2O bonds in the films after annealing. Thermal conductivity of the annealed film was ∼70% lower than undoped bulk single crystal yttria. The cumulative interface thermal resistivity of substrate-Er+3:Y2O3-metal heater was determined to be ∼2.5 × 10-8 m2 K/W. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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