| Autor: |
Meneghesso, Gaudenzio, Meneghini, Matteo, Medjdoub, Farid, Tagro, Yoann, Grimbert, Bertrand, Ducatteau, Damien, Rolland, Nathalie, Silvestri, Riccardo, Zanoni, Enrico |
| Zdroj: |
IEEE Transactions on Device & Materials Reliability; Dec2013, Vol. 13 Issue 4, p480-488, 9p |
| Abstrakt: |
In this paper, an emerging double-heterostructure high-electron mobility transistor based on AlN/GaN/AlGaN grown on silicon substrate is presented, which enables a unique simultaneous achievement of high breakdown voltage and high frequency performance. This configuration system allowed state-of-the-art GaN-on-silicon dc, RF output power, and noise performances at 40 GHz, paving the way for high-performance millimeter-wave (mmW) cost-effective amplifiers. Preliminary reliability assessment has been performed on this new class of RF devices, showing promising mmW GaN-on-Si device stability for the first time. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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