Investigation of intrinsic transistor performance of advanced CMOS devices with 2.5 nm NO gate oxides.
| Autor: | Kubicek, S., Henson, W.K., De Keersgieter, A., Badenes, G., Jansen, P., van Meer, H., Kerr, D., Naem, A., Deferm, L., De Meyer, K. |
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| Zdroj: | International Electron Devices Meeting 1999 Technical Digest (Cat No99CH36318); 1999, p823-826, 4p |
| Databáze: | Complementary Index |
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