Metamorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As HEMTs on GaAs substrate with f/sub T/ over 200 GHz.
| Autor: | Dumka, D.C., Hoke, W.E., Lemonias, P.J., Cueva, G., Adesida, I. |
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| Zdroj: | International Electron Devices Meeting 1999 Technical Digest (Cat No99CH36318); 1999, p783-786, 4p |
| Databáze: | Complementary Index |
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