Heavily doped and extremely shallow junctions on insulator by SONCTION (SilicON Cut-off juncTION) process.
| Autor: | Skotnicki, T., Jrczak, M., Gwoziecki, R., Lenoble, D., Ribot, P., Paoli, M., Martins, J., Tormen, B., Grouillet, A., Pantel, R., Galvier, J. |
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| Zdroj: | International Electron Devices Meeting 1999 Technical Digest (Cat No99CH36318); 1999, p513-516, 4p |
| Databáze: | Complementary Index |
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