Gate oxides in 50 nm devices: thickness uniformity improves projected reliability.
| Autor: | Weir, B.E., Silverman, P.J., Alam, M.A., Baumann, F., Monroe, D., Ghetti, A., Bude, J.D., Timp, G.L., Hamad, A., Oberdick, T.M., Zhao, N.X., Ma, Y., Brown, M.M., Hwang, D., Sorsch, T.W., Madic, J. |
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| Zdroj: | International Electron Devices Meeting 1999 Technical Digest (Cat No99CH36318); 1999, p437-440, 4p |
| Databáze: | Complementary Index |
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