Lateral diffusion of carriers and screening measurements in GaInAsP/GaInAs MQW photorefractive devices at 1.55 /spl mu/m.

Autor: De Matos, C., L'Haridon, H., Le Corre, A., Lambert, B., Salaun, S., Lever, R., Pleumeekers, J., Keromnes, J.C., Moisan, G., Vaudry, C., Gosselin, S.
Zdroj: Proceedings of Semiconducting & Semi-Insulating Materials Conference; 1996, p325-328, 4p
Databáze: Complementary Index