Impact ionization phenomenon in 0.1 /spl mu/m MOSFET at low temperature and low voltage.

Autor: Koyanagi, M., Matsumoto, T., Tsuno, M., Shimatani, T., Yoshida, Y., Watanabe, H.
Zdroj: Proceedings of IEEE International Electron Devices Meeting; 1993, p341-344, 4p
Databáze: Complementary Index