Impact ionization phenomenon in 0.1 /spl mu/m MOSFET at low temperature and low voltage.
Autor: | Koyanagi, M., Matsumoto, T., Tsuno, M., Shimatani, T., Yoshida, Y., Watanabe, H. |
---|---|
Zdroj: | Proceedings of IEEE International Electron Devices Meeting; 1993, p341-344, 4p |
Databáze: | Complementary Index |
Externí odkaz: |