Influence of T-gate shape and footprint length on PHEMT high frequency performance.

Autor: Brech, H., Grave, T., Simlinger, T., Selberherr, S.
Zdroj: GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 19th Annual Technical Digest 1997; 1997, p66-69, 4p
Databáze: Complementary Index