Increased charge capacity in Hg1-xCdxTe MIS devices using a ramped gate voltage.
| Autor: | Beck, J.D., Chapman, R.A., Kinch, M.A., Borrello, S.R., Roberts, C.G. |
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| Zdroj: | 1980 International Electron Devices Meeting; 1980, p517-520, 4p |
| Databáze: | Complementary Index |
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