A high-speed GaAs 16 Kb SRAM of 4.4 ns/2 W using triple-level metal interconnection.
| Autor: | Nakano, H., Noda, M., Sakai, M., Matsue, S., Oku, T., Sumitani, K., Makino, H., Takano, H., Nishitani, K. |
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| Zdroj: | 12th Annual Symposium on Gallium Arsenide Integrated Circuit (GaAs IC); 1990, p151-154, 4p |
| Databáze: | Complementary Index |
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