Static and dynamic characteristics of a 1100 V, double-implanted, planar, 4H-SiC PiN rectifier.

Autor: Khemka, V., Patel, R., Ramungul, N., Chow, T.P., Gutmann, R.J.
Zdroj: 11th International Symposium on Power Semiconductor Devices & ICs ISPSD'99 Proceedings (Cat No99CH36312); 1999, p137-140, 4p
Databáze: Complementary Index