Static and dynamic characteristics of a 1100 V, double-implanted, planar, 4H-SiC PiN rectifier.
Autor: | Khemka, V., Patel, R., Ramungul, N., Chow, T.P., Gutmann, R.J. |
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Zdroj: | 11th International Symposium on Power Semiconductor Devices & ICs ISPSD'99 Proceedings (Cat No99CH36312); 1999, p137-140, 4p |
Databáze: | Complementary Index |
Externí odkaz: |