20 V LDMOS optimized for high drain current condition. Which is better, n-epi or p-epi?
| Autor: | Kinoshita, K., Kawaguchi, Y., Sano, T., Nakagawa, A. |
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| Zdroj: | 11th International Symposium on Power Semiconductor Devices & ICs ISPSD'99 Proceedings (Cat No99CH36312); 1999, p59-62, 4p |
| Databáze: | Complementary Index |
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