High-speed Si hetero-bipolar transistor with a SiC wide-gap emitter and an ultrathin heavily doped photoepitaxially grown base.
| Autor: | Yamazaki, T., Namura, I., Sugii, T., Goto, H., Tahara, A., Ito, T. |
|---|---|
| Zdroj: | Proceedings of the 1991 Bipolar Circuits & Technology Meeting; 1991, p71-74, 4p |
| Databáze: | Complementary Index |
| Externí odkaz: |
|