Electroactive passivation of high power semiconductor devices with punch through design by hydrogenated amorphous carbon layers (a-C:H).
| Autor: | Barthelmess, R., Beuermann, M., Metzner, D., Schmidt, G., Westerholt, D., Winter, N., Gerstenmaier, Y.C., Reznik, D., Ruff, M., Schulze, H.-J., Willmeroth, A. |
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| Zdroj: | Proceedings of the 10th International Symposium on Power Semiconductor Devices & ICs ISPSD'98 (IEEE Cat No98CH36212); 1998, p181-184, 4p |
| Databáze: | Complementary Index |
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