The Effects Of Passivation And Post Passivation Anneal On The Integrity Of Thin Gate Oxides.
| Autor: | Gelatos, C., Hsing-Huang Tseng, Filipiak, S., Sieloj, D., Grant, J., Tobin, P., Cotton, R. |
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| Zdroj: | Proceedings of Technical Papers International Symposium on VLSI Technology, Systems & Applications; 1997, p188-192, 5p |
| Databáze: | Complementary Index |
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