Enhanced gallium arsenide metal-semiconductor field effect transistors designed for high temperature operation.
| Autor: | Reston, R.R., Lee, H.Y., Ito, C.R., Trombley, G.J., Havasy, C.K., Johnson, B. |
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| Zdroj: | Proceedings of National Aerospace & Electronics Conference (NAECON'94); 1994, p1138-1138, 1p |
| Databáze: | Complementary Index |
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