A 30 V high-speed thin-film SOI power MOSFET having tungsten polycide gate.
| Autor: | Matsumoto, S., Il-Jung Kim, Sakai, T., Fukumitsu, T., Yachi, T. |
|---|---|
| Zdroj: | Proceedings of International Symposium on Power Semiconductor Devices & IC's: ISPSD '95; 1995, p466-471, 6p |
| Databáze: | Complementary Index |
| Externí odkaz: |
|