An IGBT gate drive ASIC with 3 A/12.5 A CMOS output stages.

Autor: Biber, A., Kuratli, C., Qiuting Huang, Felber, N., Thiemann, U.
Zdroj: Proceedings of International Symposium on Power Semiconductor Devices & IC's: ISPSD '95; 1995, p411-415, 5p
Databáze: Complementary Index