Power silicon carbide devices based on Lely grown substrates.

Autor: Lebedev, A.A., Andreev, A.N., Anikin, M.M., Rastegaeva, M.G., Savkina, N.S., Strelchuk, A.M., Syrkin, A.L., Tregubova, A.S., Chelnokov, V.E.
Zdroj: Proceedings of International Symposium on Power Semiconductor Devices & IC's: ISPSD '95; 1995, p90-95, 6p
Databáze: Complementary Index