A fully passivated ultra low noise W-band monolithic InGaAs/InAlAs/InP HEMT amplifier.

Autor: Ng, G.I., Lai, R., Hwang, Y., Wang, H., Lo, D.C.W., Block, T., Tan, K., Streit, D.C., Dia, R.M., Freudenthal, A., Chow, P.D., Berenz, J.
Zdroj: IEEE 1995 Microwave & Millimeter-Wave Monolithic Circuits Symposium Digest of Papers; 1995, p63-66, 4p
Databáze: Complementary Index