Application of low-temperature N/sub 2/O-annealed oxide and chemical oxide for both boron penetration and gate depletion reductions for thin p/sup +/ tungsten polycide gate.

Autor: Yun Seok Chun, Kwang Pyo Lee, Sang Su Lee, Sang Chul Kim, Byungseop Hong, Hong Seon Yang
Zdroj: ICVC '99 6th International Conference on VLSI & CAD (Cat No99EX361); 1999, p237-240, 4p
Databáze: Complementary Index