Application of low-temperature N/sub 2/O-annealed oxide and chemical oxide for both boron penetration and gate depletion reductions for thin p/sup +/ tungsten polycide gate.
Autor: | Yun Seok Chun, Kwang Pyo Lee, Sang Su Lee, Sang Chul Kim, Byungseop Hong, Hong Seon Yang |
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Zdroj: | ICVC '99 6th International Conference on VLSI & CAD (Cat No99EX361); 1999, p237-240, 4p |
Databáze: | Complementary Index |
Externí odkaz: |