The influence of the Hall scattering factor on the determination of activation energies of the nitrogen donors in 4H-SiC epitaxial layers.
| Autor: | Rutsch, G., Devaty, R.P., Chovke, W.J. |
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| Zdroj: | HITEN 99 Third European Conference on High Temperature Electronics (IEEE Cat No99EX372); 1999, p191-194, 4p |
| Databáze: | Complementary Index |
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