A 10 Gb/s AlGaAs/GaAs HBT high power fully-differential limiting distributed amplifier for III-V Mach-Zehnder modulator.

Autor: Wong, T.Y.K., Freundorfer, A.P., Beggs, B.C., Sitch, J.E.
Zdroj: GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995; 1995, p201-204, 4p
Databáze: Complementary Index