Measurement of the Electron Ionization Coefficient Temperature Dependence in InGaAs-based Heterojunction Bipolar Transistors.
| Autor: | Meneghesso, G., Neviani, A., Parisotto, R., Vendrame, L., Hafizi, M., Stanchina, W. E., Canali, C., Zanoni, E. |
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| Zdroj: | ESSDERC '96: Proceedings of the 26th European Solid State Device Research Conference; 1996, p447-450, 4p |
| Databáze: | Complementary Index |
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