Quantum Transport Effects in Deep Submicron n-MOSFET.

Autor: Mieville, J.P., Eschle, M., Shi, Z.M., Barrier, J., Dutoit, M., Moret, J.M., Oppliger, Y.
Zdroj: ESSDERC '91: 21st European Solid State Device Research Conference; 1991, p539-542, 4p
Databáze: Complementary Index