Intrinsic gate capacitances of SOI MOSFETs: measurement, modelling, floating substrate effects.

Autor: Flandre, D., Van de Wiele, F., Jespers, P.G.A., Haond, M.
Zdroj: ESSDERC '90: 20th European Solid State Device Research Conference; 1990, p437-440, 4p
Databáze: Complementary Index