Volume Inversion in SOI MOSFETs with Double Gate Control: A New Transistor Operation with Greatly Enhanced Performance.
| Autor: | Balestra, F., Cristoloveanu, S., Benachir, M., Brini, J., Elewa, T. |
|---|---|
| Zdroj: | ESSDERC '87: 17th European Solid State Device Research Conference; 1987, p399-402, 4p |
| Databáze: | Complementary Index |
| Externí odkaz: |
|