InGaN/GaN field emitters with a piezoelectrically-lowered surface barrier.
| Autor: | Underwood, R.D., Kozodoy, P., Keller, S., BenBaars, S.P., Mishra, U.K. |
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| Zdroj: | Eleventh International Vacuum Microelectronics Conference IVMC'98 (Cat No98TH8382); 1998, p283-284, 2p |
| Databáze: | Complementary Index |
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