Characterization of n-channel and p-channel LPCVD polysilicon MOSFETs.

Autor: Shichijo, H., Malhi, S.D.S., Chatterjee, P.K., Shah, R.R., Douglas, M.A., Lam, H.W.
Zdroj: 1983 International Electron Devices Meeting; 1983, p202-205, 4p
Databáze: Complementary Index