1600V Power MOSFET with 20ns switching-speed.
Autor: | Yoshida, I., Okabe, T., Iijima, T., Ohtaka, S., Nagata, M. |
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Zdroj: | 1983 International Electron Devices Meeting; 1983, p91-94, 4p |
Databáze: | Complementary Index |
Externí odkaz: |
Autor: | Yoshida, I., Okabe, T., Iijima, T., Ohtaka, S., Nagata, M. |
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Zdroj: | 1983 International Electron Devices Meeting; 1983, p91-94, 4p |
Databáze: | Complementary Index |
Externí odkaz: |