Fabrication of Si-MOS Fet Using NTD Si as Semi-Insulating Substrate.
Autor: | Ho, Vu Q., Sugano, Takuo |
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Zdroj: | 1981 Symposium on VLSI Technology Digest of Technical Papers; 1981, p84-85, 2p |
Databáze: | Complementary Index |
Externí odkaz: |
Autor: | Ho, Vu Q., Sugano, Takuo |
---|---|
Zdroj: | 1981 Symposium on VLSI Technology Digest of Technical Papers; 1981, p84-85, 2p |
Databáze: | Complementary Index |
Externí odkaz: |