Implanted GaAs-on-Si X-band power FETs incorporating low-temperature MBE buffer layers.
| Autor: | Kanber, H., Wang, D.C., Chi, T.Y., Delaney, M.J. |
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| Zdroj: | 11th Annual Gallium Arsenide Integrated Circuit (GaAs IC) Symposium; 1989, p151-154, 4p |
| Databáze: | Complementary Index |
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