Large-signal characteristics of InP-based heterojunction bipolar transistors and their use in optoelectronic preamplifier design.

Autor:	Samelis, A., Pavlidis, D., Sejalon, F., Chandrasekhar, S., Lunardi, L.M.
Zdroj:	Seventh International Conference on Indium Phosphide & Related Materials; 1995, p648-651, 4p
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu