The 1.1 eV deep level in 4H-SiC.
| Autor: | Mitchel, W.C., Perrin, R., Goldstein, J., Roth, M., Smith, S.R., Solomon, J.S., Evwaraye, A.O., Hobgood, H.M., Augustine, G., Balakrishna, V. |
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| Zdroj: | Semiconducting & Insulating Materials 1998 Proceedings of the 10th Conference on Semiconducting & Insulating Materials (SIMC-X) (Cat No98CH36159); 1999, p283-286, 4p |
| Databáze: | Complementary Index |
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