Deposited SiO/sub 2/ as the insulator for GaInAs and InP MISFETs.
| Autor: | Gardner, P.D., Narayan, S.Y. |
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| Zdroj: | Proceedings, IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices & Circuits; 1989, p21-30, 10p |
| Databáze: | Complementary Index |
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